Product
700V GaN Device Product List
This is a 700V GaN-on-Si enhancement-mode power transistor in difference packages. The properties of GaN allow for high current, high breakdown voltage and high switching frequency. The package offers low parasitic inductance, strong heat dissipation capability and high solderability, which make GaN apply better to consumer and industrial applications.
| Part Number | Package | VDS max (V) | RDS(on) typ (mΩ) | RDS(on) max (mΩ) | QG (nC) | Qoss (nC) | ID max (A) | IDPuls max (A) | Status |
|---|---|---|---|---|---|---|---|---|---|
| GS700EDC100A | DFN 8X8 | 700 | 100 | 140 | 4 | 19 | 16 | 34 | Released |
| GS700ETA100A | TO220 | 700 | 100 | 140 | 4 | 19 | 16 | 34 | Released |
| GS700ETC100A | TO252 | 700 | 100 | 140 | 4 | 19 | 16 | 34 | Released |
| GS700ETT100A | TOLT | 700 | 100 | 140 | 4 | 19 | 16 | 34 | Released |
| GS700EDA165B | DFN 5X6 | 700 | 165 | 240 | 2.5 | 12 | 10 | 18 | Released |
| GS700EDC165B | DFN 8X8 | 700 | 165 | 240 | 2.5 | 12 | 10 | 18 | Released |
| GS700ETA165B | TO220 | 700 | 165 | 240 | 2.5 | 12 | 10 | 18 | Released |
| GS700ETC165B | TO252 | 700 | 165 | 240 | 2.5 | 12 | 10 | 18 | Released |
| GS700EDA360A | DFN 5X6 | 700 | 360 | 500 | 1.75 | 5.4 | 5 | 9 | Released |
| GS700ETC360A | TO252 | 700 | 360 | 500 | 1.75 | 5.4 | 5 | 9 | Released |
| GS700EDA460B | DFN 5X6 | 700 | 460 | 600 | 1.6 | 4.6 | 3.3 | 6 | Released |
| GS700EDC460B | DFN 8X8 | 700 | 460 | 600 | 1.6 | 4.6 | 3.3 | 6 | Released |
| GS700EWF100G1 | Wafer | 700 | 100 | 110 | 3.5 | 32 | 16 | 34 | Released |
| GS700EWF140G1 | Wafer | 700 | 140 | 190 | 2.8 | 24 | 11.5 | 20.5 | Released |
| GS700EWF165G1 | Wafer | 700 | 165 | 240 | 2.5 | 12 | 10 | 18 | Released |
| GS700EWF250G1 | Wafer | 700 | 250 | 310 | 1.5 | 13 | 6 | 10 | Released |
| GS700EWF360G0 | Wafer | 700 | 360 | 460 | 1.4 | 8.9 | 5 | 9 | Released |
| GS700EWF460G1 | Wafer | 700 | 460 | 600 | 1.5 | 4.6 | 3.3 | 6 | Released |
| GS700EWF1KG1 | Wafer | 700 | 1000 | 1200 | 0.4 | 3.5 | 1.5 | 3 | Released |
Product Naming Rule
| GS | DVR | Mode | PC | TRR | G |
|---|---|---|---|---|---|
| Gansic | Drain Voltage Rating | Enhance/ Depletion | Package Code | Typ_Rdson Resistance | Generation |
| GS | 650 | E | DB | 165 | A |
| Gansic | 650V | Enhance mode | DFN6x8 | 165mohm | Generation A |
| Package Type | Code Name |
|---|---|
| DFN5x6 | DA |
| DFN6x8 | DB |
| DFN8x8 | DC |
| QFN6x8 | QB |
| TO220F | TA |
| TO246_4 | TB |
| TO252 | TC |
| Wafer | WF |
Hong Kong’s First GaN 65W Type-C/USB British Type Electrical Wall Socket (Single Site)
In line with the global trend of green energy, we officially announced the birth of the first GaN65W Type-C/USB electrical wall socket (single site) in Hong Kong (GSWP651C, 82411). Hong Kong’s first commercial-grade fast charging wall plug, breaking through the power limitations of traditional wall plugs, integrating a 65W USB-C PD fast charging module to provide fast charging for mobile phones and even laptops without the need for additional adapters, redefining home/office power standards.
Specification
- Input: AC220V, ~50/60Hz.
- Output Type C: 5V/3A; 9V/3A; 12V/3A; 15V/3A; 20V/3.25A
- Supports a variety of fast charging protocols, such as PD, QC, PPS, etc
Passed BS EN IEC 62368-1 and BS 1363-2:2023 Test