Product
700V GaN Device Product List
This is a 700V GaN-on-Si enhancement-mode power transistor in difference packages. The properties of GaN allow for high current, high breakdown voltage and high switching frequency. The package offers low parasitic inductance, strong heat dissipation capability and high solderability, which make GaN apply better to consumer and industrial applications.
| Part Number | Package | VDS max (V) | RDS(on) typ (mΩ) | RDS(on) max (mΩ) | QG (nC) | Qoss (nC) | ID max (A) | IDPuls max (A) | Status |
|---|---|---|---|---|---|---|---|---|---|
| GS700EDC100A | DFN 8X8 | 700 | 100 | 140 | 4 | 19 | 16 | 34 | Released |
| GS700ETA100A | TO220 | 700 | 100 | 140 | 4 | 19 | 16 | 34 | Released |
| GS700ETC100A | TO252 | 700 | 100 | 140 | 4 | 19 | 16 | 34 | Released |
| GS700ETT100A | TOLT | 700 | 100 | 140 | 4 | 19 | 16 | 34 | Released |
| GS700EDA165B | DFN 5X6 | 700 | 165 | 240 | 2.5 | 12 | 10 | 18 | Released |
| GS700EDC165B | DFN 8X8 | 700 | 165 | 240 | 2.5 | 12 | 10 | 18 | Released |
| GS700ETA165B | TO220 | 700 | 165 | 240 | 2.5 | 12 | 10 | 18 | Released |
| GS700ETC165B | TO252 | 700 | 165 | 240 | 2.5 | 12 | 10 | 18 | Released |
| GS700EDA360A | DFN 5X6 | 700 | 360 | 500 | 1.75 | 5.4 | 5 | 9 | Released |
| GS700ETC360A | TO252 | 700 | 360 | 500 | 1.75 | 5.4 | 5 | 9 | Released |
| GS700EDA460B | DFN 5X6 | 700 | 460 | 600 | 1.6 | 4.6 | 3.3 | 6 | Released |
| GS700EDC460B | DFN 8X8 | 700 | 460 | 600 | 1.6 | 4.6 | 3.3 | 6 | Released |
| GS700EWF100G1 | Wafer | 700 | 100 | 110 | 3.5 | 32 | 16 | 34 | Released |
| GS700EWF140G1 | Wafer | 700 | 140 | 190 | Eng | ||||
| GS700EWF165G1 | Wafer | 700 | 165 | 240 | 2.5 | 12 | 10 | 18 | Released |
| GS700EWF250G1 | Wafer | 700 | 250 | 310 | 1.5 | 13 | 6 | 10 | Released |
| GS700EWF360G0 | Wafer | 700 | 360 | 460 | 1.4 | 8.9 | 5 | 9 | Released |
| GS700EWF460G1 | Wafer | 700 | 460 | 600 | 1.5 | 4.6 | 3.3 | 6 | Released |
| GS700EWF1KG1 | Wafer | 700 | 1000 | 1200 | 0.4 | 3.5 | 1.5 | 3 | Released |
Product Naming Rule
| GS | DVR | Mode | PC | TRR | G |
|---|---|---|---|---|---|
| Gansic | Drain Voltage Rating | Enhance/ Depletion | Package Code | Typ_Rdson Resistance | Generation |
| GS | 650 | E | DB | 165 | A |
| Gansic | 650V | Enhance mode | DFN6x8 | 165mohm | Generation A |
| Package Type | Code Name |
|---|---|
| DFN5x6 | DA |
| DFN6x8 | DB |
| DFN8x8 | DC |
| QFN6x8 | QB |
| TO220F | TA |
| TO246_4 | TB |
| TO252 | TC |
| Wafer | WF |