About Us

Gansic Semiconductor Company Limited was established in the Hong Kong Special Administrative Region of China in December 2022. It focuses on the R&D and production of GaN power devices. Headquarter is set in the the core of high technology of Hong Kong, Hong Kong Science and Technology Park. The founders are Ph.D. from MIT, MBA graduate of the University of Hong Kong; as native Hong Konger, Gansic Semiconductor has strong passion to use the 30+ years of semiconductor experience to contribute to the semiconductor industry in China and Hong Kong, China.

Gansic Semiconductor has strong supply chain support, including wafer fabs and epi supply, and has a strong network in the application market. Leveraging on our advantages, we strive to become one of the leading GaN suppliers originating from Hong Kong, China.

Why GaN?

Gallium nitride [GaN] is an inorganic, third-generation semiconductor material, it is stable and hard, and the melting point is about 1700°C, and it can work at high temperatures above 200°C after being made into GaN power devices (GaNFET). Compared with silicon, gallium nitride has a band gap 3 times larger, a breakdown field strength 10 times higher, a saturated electron migration rate 3 times faster, and a thermal conductivity 2 times higher. It is widely used in high-power and high-frequency applications, such as communications, radar, satellite communications, microwave radio frequency and other fields. GaN chips offer many advantages and advantages over traditional silicon chips

In terms of manufacturing, GaN crystals can be grown on various substrates, and we are producing epitaxial layers on silicon, which can use existing silicon manufacturing facilities at a relatively low cost, thereby increasing market competitiveness.